Main centres: | 1-3 business days |
Regional areas: | 3-4 business days |
Remote areas: | 3-5 business days |
The F12N60 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switch mode power supply.
Gate voltage | 30V |
Drain Source voltage | 600V |
Max continuous drain current | 12A |
Max pulse drain current | 48A |
Gate threshold voltage | 4V |