This item has closed with no items sold
View other items offered by TachyonTech5

Similar products

2TB Samsung 990 PRO NVMe M.2 2280 PCI-Express 4.0 x4 Solid State Drive
R5,196.00
34% OFF
Apacer AS2280P4 512GB M.2 PCIe Gen3 NVMe SSD (Solid State Drive) Compliant with NVMe 1.2 Standard...
R739.00 R1,124.00
Adata Legend 850 PCIe Gen4 x4 M.2 2280 Solid State Drive 512GB
R1,729.82
500GB Transcend 115S NVMe 1.4 M.2 PCI-Express 3.0 x4 Solid State Drive - 2280
R1,371.00
512GB Samsung PM9B1 M.2 (2280) PCI-e Gen4 x4 NVMe Solid State Drive
Closed

512GB Samsung PM9B1 M.2 (2280) PCI-e Gen4 x4 NVMe Solid State Drive

1 was available / new
R874.00
Shipping
R35.00 Standard shipping using one of our trusted couriers applies to most areas in South Africa. Some areas may attract a R30.00 surcharge. This will be calculated at checkout if applicable.
Check my rate
The seller has indicated that they will usually have this item ready to ship within 3 business days. Shipping time depends on your delivery address. The most accurate delivery time will be calculated at checkout, but in general, the following shipping times apply:
 
Standard Delivery
Main centres:  1-3 business days
Regional areas: 3-4 business days
Remote areas: 3-5 business days
Returns
Warranty Type: Manufacturer 1 Year manufacturer warranty provided. Money-Back Guarantee: 7 Days: Unopened products will be accepted back within 7 days.
Get it now, pay later

Product details

Condition
New
Location
South Africa
Brand
Samsung
Product code
MZ-VL45120
Bob Shop ID
628059185

  • 512GB
  • Triple Core
  • NVMe 1.4
  • PCIe 4.0 x4
  • Sequential Read: 3,500 MB/s
  • Sequential Write: 2,500 MB/s
  • Random Read: 430,000 IOPS
  • Random Write: 400,000 IOPS

Specifications
Product CodeMZ-VL45120
Solid-State-Drive
Capacity512 GB
Overprovisioning35.2 GB / 7.4 %
Released2022
Part NumberMZVL4512HBLU-00BL7
MarketConsumer
Physical
Form FactorM.2 2280 (Single-Sided)
InterfacePCIe 4.0 x4
ProtocolNVMe 1.4
Controller
ManufacturerMarvell
Name88SS1322 Whistler Plus
ArchitectureArm Cortex -R5
Core CountTriple-Core
FoundryTSMC FinFET
Process12 nm
Flash Channels4 @ 1,200 MT/s
Chip Enables4
Controller FeaturesHMB (enabled)
NAND Flash
ManufacturerSamsung
NameV-NAND V6
Part NumberK9OUGY8J5B-CCK0
TypeTLC
Technology128-layer
Speed1200 MT/s
Capacity1 chip @ 4 Tbit
Toggle4
TopologyCharge Trap
Die Size102 mm²
(5.0 Gbit/mm²)
Dies per Chip8 dies @ 512 Gbit
Planes per Die2
Decks per Die1
Word Lines136 per NAND String
94.1% Vertical Efficiency
Read Time (tR)45 µs
Program Time (tProg)390 µs
Block Erase Time (tBERS)3.5 ms
Die Read Speed711 MB/s
Die Write Speed82 MB/s
Endurance3000 P/E Cycles
(up to)
Page Size16 KB
DRAM Cache
TypeNone
Host-Memory-Buffer (HMB)64 MB
Performance
Sequential Read3,500 MB/s
Sequential Write2,500 MB/s
Random Read430,000 IOPS
Random Write400,000 IOPS

Recently viewed

See more
skakels van n ketting boek 1 en 2 deur Driekie Grobler
R250.00
British & Commonwealth, Marksman proficiency brass sleeve badge
R70.00 No bids
1961 SA PF64 Silver 2OC Graded
R750.00 No bids
CONFLICT: Denied OPS (XBOX 360)
R150.00