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512GB Samsung PM9B1 M.2 (2280) PCI-e Gen4 x4 NVMe Solid State Drive

512GB Samsung PM9B1 M.2 (2280) PCI-e Gen4 x4 NVMe Solid State Drive

New 1 available
Only 1 left – grab it before it’s gone!
R911.00
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R35.00 Standard shipping using one of our trusted couriers applies to most areas in South Africa. Some areas may attract a R30.00 surcharge. This will be calculated at checkout if applicable.
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The seller has indicated that they will usually have this item ready to ship within 3 business days. Shipping time depends on your delivery address. The most accurate delivery time will be calculated at checkout, but in general, the following shipping times apply:
 
Standard Delivery
Main centres:  1-3 business days
Regional areas: 3-4 business days
Remote areas: 3-5 business days
Seller
TachyonTech5
66.67 % Positive ratings
Returns
Warranty Type: Manufacturer 1 Year manufacturer warranty provided. Money-Back Guarantee: 7 Days: Unopened products will be accepted back within 7 days.
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Product details

Condition
New
Location
South Africa
Brand
Samsung
Product code
MZ-VL45120
Bob Shop ID
638262393

  • 512GB
  • Triple Core
  • NVMe 1.4
  • PCIe 4.0 x4
  • Sequential Read: 3,500 MB/s
  • Sequential Write: 2,500 MB/s
  • Random Read: 430,000 IOPS
  • Random Write: 400,000 IOPS

Specifications
Product CodeMZ-VL45120
Solid-State-Drive
Capacity512 GB
Overprovisioning35.2 GB / 7.4 %
Released2022
Part NumberMZVL4512HBLU-00BL7
MarketConsumer
Physical
Form FactorM.2 2280 (Single-Sided)
InterfacePCIe 4.0 x4
ProtocolNVMe 1.4
Controller
ManufacturerMarvell
Name88SS1322 Whistler Plus
ArchitectureArm Cortex -R5
Core CountTriple-Core
FoundryTSMC FinFET
Process12 nm
Flash Channels4 @ 1,200 MT/s
Chip Enables4
Controller FeaturesHMB (enabled)
NAND Flash
ManufacturerSamsung
NameV-NAND V6
Part NumberK9OUGY8J5B-CCK0
TypeTLC
Technology128-layer
Speed1200 MT/s
Capacity1 chip @ 4 Tbit
Toggle4
TopologyCharge Trap
Die Size102 mm²
(5.0 Gbit/mm²)
Dies per Chip8 dies @ 512 Gbit
Planes per Die2
Decks per Die1
Word Lines136 per NAND String
94.1% Vertical Efficiency
Read Time (tR)45 µs
Program Time (tProg)390 µs
Block Erase Time (tBERS)3.5 ms
Die Read Speed711 MB/s
Die Write Speed82 MB/s
Endurance3000 P/E Cycles
(up to)
Page Size16 KB
DRAM Cache
TypeNone
Host-Memory-Buffer (HMB)64 MB
Performance
Sequential Read3,500 MB/s
Sequential Write2,500 MB/s
Random Read430,000 IOPS
Random Write400,000 IOPS

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