| Main centres: | 1-3 business days |
| Regional areas: | 3-4 business days |
| Remote areas: | 3-5 business days |
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 430 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: TO-220
Reclaimed product in good condition.
