Infineon (1EDS5663HXUMA1) MOSFET Driver, High Side, 3V to 3.5V Supply

MOSFET Driver, High Side, 3V to 3.5V Supply, 8A Out, 37ns Delay, SOIC-16Product OverviewCoolGaN and similar GaN switches require a continuous gate current of a few mAin their "on" state. Besides, due to low threshold voltage and extremely fastswitching transients, a negative "off" voltage level may be needed. Infineon'sGaN EiceDRIVER solves these issues with very low effort. The two output stagesshown below enable a zero "off" level to eliminate any duty-cycle dependence. Inaddition, the differential topology is able to provide negative gate drivewithout the need for a negative supply voltage. However, it requires a floatingsupply voltage not compatible with bootstrapping.Dedicated gate driver ICs for Infineon's high voltage GaN power switches(CoolGaN, X-GaN)Single output supply voltage (typ. 8 V, floating)Switching behavior independent of duty-cycle (2"off" voltage levels)Differential concept to ensure negative gate drive voltage under any conditionFast input-to-output propagation (37 ns) with excellent stability (+7/-6ns)Galvanic input-to-output isolation based on coreless transformer (CT) technologyCommon mode transient immunity (CMTI) > 200 V/nsApplicationsDC, DC ConvertersProduct InformationNo. of Channels: 1ChannelsDriver Configuration: High SidePower Switch Type: GaN HEMTNo. of Pins: 16PinsDriver Case Style: SOICIC Case / Package: SOICSupply Voltage Min: 3VSupply Voltage Max: 3.5VOperating Temperature Min: -40°COperating Temperature Max: 85°CInput Delay: 37nsOutput Delay: 37nsProduct Range: GaN EiceDRIVERMSL: MSL 1 - Unlimited