Infineon (BFP450H6327XTSA1) Bipolar - RF Transistor, NPN, 4.5 V, 24 GHz

Bipolar - RF Transistor, NPN, 4.5 V, 24 GHz, 500 mW, 170 mA, SOT-343Product OverviewThe BFP 450 H6327 is a NPN wideband Bipolar RF Transistor with its highlinearity at currents as low as 50mA the device supports energy efficientdesigns. The typical transition frequency is approximately 24GHz, hence thedevice offers high power gain at frequencies up to 3GHz in amplifierapplications. The device is housed in an easy to use plastic package withvisible leads.Low noise transistorBased on Infineon ?s reliable very high volume 25GHz silicon bipolar technologyHalogen-freeProduct InformationTransistor Polarity: NPNCollector Emitter Voltage V(br)ceo: 4.5VTransition Frequency ft: 24GHzPower Dissipation Pd: 500mWDC Collector Current: 170mADC Current Gain hFE: 95hFERF Transistor Case: SOT-343No. of Pins: 4PinsOperating Temperature Max: 150°CTransistor Mounting: Surface MountProduct Range: -Automotive Qualification Standard: AEC-Q101MSL: MSL 1 - Unlimited