Infineon (IKW30N60TFKSA1) IGBT, General Purpose, 60 A, 2.05 V, 187 W, 600 V

IGBT, General Purpose, 60 A, 2.05 V, 187 W, 600 V, TO-247, 3 PinsProduct OverviewThe IKW30N60T is a 600V Discrete IGBT with very soft, fast recoveryanti-parallel emitter controlled diode. TRENCHSTOP IGBT technology leads tosignificant improvement of static as well as dynamic performance of the devicedue to combination of trench top-cell and filed stop concept. Combination ofIGBT with soft recovery emitter controlled diode further minimizes the turn-onlosses. The highest efficiency is reached due to the best compromise betweenswitching and conduction losses. Discrete IGBT is ideal for hard switchingapplications as well as soft switching applications and other resonantapplications.Lowest Vce (sat) drop for lower conduction lossesLow switching lossesEasy to parallel switching capability due to positive temperature coefficient inVce (sat)High ruggedness, temperature stable behaviourLow EMI emissionsLow gate chargeVery tight parameter distributionHighest efficiencyLow conduction and switching lossesApplicationsPower Management, Alternative Energy, IndustrialProduct InformationContinuous Collector Current: 60ACollector Emitter Saturation Voltage: 2.05VPower Dissipation: 187WCollector Emitter Voltage Max: 600VTransistor Case Style: TO-247No. of Pins: 3PinsOperating Temperature Max: 175°CTransistor Mounting: Through Hole