Infineon (IKW40N120H3FKSA1) IGBT, 40 A, 2.4 V, 483 W, 1.2 kV

Product OverviewThe IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recoveryanti-parallel diode designed specifically to replace planar MOSFETs inapplications switching at frequencies below 70kHz. The key feature of thisfamily is a MOSFET-like turn-off switching behaviour and thus leading to lowturn off losses. Discrete IGBT is ideal for hard switching applications as wellas soft switching applications and other resonant applications.Low switching losses for high efficiencyFast switching behaviour with low EMI emissionsLow gate resistor selection possible (down to 5R) whilst maintaining excellentswitching behaviourShort circuit capabilityExcellent performanceLow switching and conduction lossesApplicationsPower Management, Alternative EnergyProduct InformationContinuous Collector Current: 40ACollector Emitter Saturation Voltage: 2.4VPower Dissipation: 483WCollector Emitter Voltage Max: 1.2kVTransistor Case Style: TO-247No. of Pins: 3PinsOperating Temperature Max: 175°C