Infineon (IR2112PBF) Dual Power IC, High Side And Low Side, 10V-20V Supply

Dual Power IC, High Side And Low Side, 10V-20V Supply, 420mA Out, 105ns Delay,DIP-14Product OverviewThe IR2112PBF is a high voltage high speed power MOSFET and IGBT Driver withindependent high and low-side referenced output channels. Proprietary HVIC andlatch immune CMOS technology enables ruggedized monolithic construction. Logicinputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic.The output driver features a high pulse current buffer stage designed forminimum driver cross-conduction.Propagation delays are matched to simplify use in high frequency applications.The floating channel can be used to drive a N-channel power MOSFET or IGBT inthe high-side configuration which operates up to 600V.Floating channel designed for bootstrap operationTolerant to negative transient voltage DV/DT ImmuneUnder-voltage lockout for both channelsCMOS Schmitt-triggered inputs with pull-downCycle-by-cycle edge-triggered shutdown logicMatched propagation delay for both channelsOutputs in phase with inputsApplicationsIndustrial, Consumer Electronics, Alternative Energy, Power ManagementProduct InformationNo. of Channels: 2ChannelsDriver Configuration: High Side and Low SidePower Switch Type: IGBT, MOSFETSupply Voltage Min: 10VSupply Voltage Max: 20VDriver Case Style: DIPInput Type: Non-InvertingIC Case / Package: DIPNo. of Pins: 14PinsSource Current: 250mAInput Delay: 125nsOutput Delay: 105nsSink Current: 500mAOperating Temperature Min: -40°COperating Temperature Max: 125°C