Infineon (IRF3205PBF) Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm

Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through HoleProduct OverviewThe IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely lowon-resistance per silicon area and fast switching performance. Advanced HEXFET®power MOSFETs utilize advanced processing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient and reliable device for use ina wide variety of applications.Dynamic dv/dt ratingFully avalanche ratedFast switching±20V gate-source voltageProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 110ADrain Source Voltage Vds: 55VDrain Source On State Resistance: 0.008ohmOn Resistance Rds(on): 0.008ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VTransistor Case Style: TO-220ABPower Dissipation Pd: 200WPower Dissipation: 200WNo. of Pins: 3PinsOperating Temperature Max: 175°C