Infineon (IRF5210STRLPBF) Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm

Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface MountProduct OverviewThe IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of thisdesign is a 150°C junction operating temperature, fast switching speed andimproved repetitive avalanche rating. These features combine to make this designan extremely efficient and reliable device for use in a wide variety of otherapplications.Advanced process technologyUltra-low ON-resistanceFast switchingRepetitive avalanche allowed up to TjmaxApplicationsAutomotive, Power ManagementProduct InformationChannel Type: P ChannelTransistor Polarity: P ChannelContinuous Drain Current Id: 38ADrain Source Voltage Vds: 100VDrain Source On State Resistance: 0.06ohmOn Resistance Rds(on): 0.06ohmTransistor Case Style: TO-263 (D2PAK)Rds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 3.8WPower Dissipation: 3.8WNo. of Pins: 3PinsOperating Temperature Max: 150°C