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Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface MountProduct OverviewThe IRF540NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advancedprocessing techniques to achieve extremely low ON-resistance per silicon area.This benefit combined with the fast switching speed and ruggedized devicedesign, provides an extremely efficient and reliable operation for use in a widevariety of applications. The surface-mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highest power capabilityand the lowest possible ON-resistance in any existing surface-mount package. Itis suitable for high current applications because of its low internal connectionresistance and can dissipate up to 2W in a typical surface-mount application.Advanced process technologyUltra-low ON-resistanceDynamic dV/dt ratingFast switchingFully avalanche ratingApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 33ADrain Source Voltage Vds: 100VDrain Source On State Resistance: 0.044ohmOn Resistance Rds(on): 0.044ohmTransistor Case Style: TO-263 (D2PAK)Rds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 130WPower Dissipation: 130WNo. of Pins: 3PinsOperating Temperature Max: 175°CMSL: MSL 1 - Unlimited