Infineon (IRFB3077PBF) Power MOSFET, N Channel, 75 V, 210 A, 0.0033 ohm

Power MOSFET, N Channel, 75 V, 210 A, 0.0033 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB3077PBF is a 75V single N-channel HEXFET® Power MOSFET with extremelylow on-resistance per silicon area and fast switching performance using TrenchMOSFET technology. Suitable for high efficiency synchronous rectification inSMPS, uninterruptible power supply, high speed power switching, hard switchedand high frequency circuits.Improved gate, avalanche and dynamic dv/dt ruggednessFully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and dI/dt capabilityApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 210ADrain Source Voltage Vds: 75VDrain Source On State Resistance: 0.0033ohmOn Resistance Rds(on): 0.0033ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 370WTransistor Case Style: TO-220ABPower Dissipation: 370WNo. of Pins: 3PinsOperating Temperature Max: 175°C