Infineon (IRFB3206PBF) Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm

Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB3206PBF is a HEXFET single N-channel Power MOSFET offers improved gate,avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiencysynchronous rectification in SMPS, hard switched and high frequency circuits.Fully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and di/dt capabilityHalogen-freeApplicationsPower Management, Motor Drive & ControlProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 210ADrain Source Voltage Vds: 60VDrain Source On State Resistance: 0.003ohmOn Resistance Rds(on): 0.003ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 300WTransistor Case Style: TO-220ABPower Dissipation: 300WNo. of Pins: 3PinsOperating Temperature Max: 175°C