Infineon (IRFB3207PBF) Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm

Power MOSFET, N Channel, 75 V, 180 A, 0.0036 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB3207PBF is a HEXFET® single N-channel Power MOSFET offers improved gate,avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiencysynchronous rectification in SMPS, hard switched and high frequency circuits.Fully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and di/dt capabilityFast switchingApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 180ADrain Source Voltage Vds: 75VDrain Source On State Resistance: 0.0036ohmOn Resistance Rds(on): 0.0036ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 330WTransistor Case Style: TO-220ABPower Dissipation: 330WNo. of Pins: 3PinsOperating Temperature Max: 175°C