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Power MOSFET, N Channel, 150 V, 83 A, 0.015 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB4321PBF is a HEXFET® single N-channel Power MOSFET offers low gatecharge improves the switching performance. It is suitable for high efficiencysynchronous rectification in SMPS, hard switched and high frequency circuits.Low RDS (ON) reduces lossesImproved diode recovery improves switching and EMI performance30V Gate voltage rating improves robustnessFully characterized avalanche SOAApplicationsAutomation & Process Control, Power Management, IndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 83ADrain Source Voltage Vds: 150VDrain Source On State Resistance: 0.015ohmOn Resistance Rds(on): 0.015ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 5VPower Dissipation Pd: 330WTransistor Case Style: TO-220ABPower Dissipation: 330WNo. of Pins: 3PinsOperating Temperature Max: 175°C