Infineon (IRFB4615PBF) Power MOSFET, N Channel, 150 V, 35 A, 0.032 ohm

Power MOSFET, N Channel, 150 V, 35 A, 0.032 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB4615PBF is a HEXFET® single N-channel Power MOSFET offers improved gate,avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiencysynchronous rectification in SMPS, hard switched and high frequency circuits.Fully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and di/dt capabilityApplicationsPower Management, IndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 35ADrain Source Voltage Vds: 150VDrain Source On State Resistance: 0.032ohmOn Resistance Rds(on): 0.032ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 144WTransistor Case Style: TO-220ABPower Dissipation: 144WNo. of Pins: 3PinsOperating Temperature Max: 175°C