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Power MOSFET, N Channel, 40 V, 120 A, 0.002 ohm, TO-220AB, Through HoleProduct OverviewThe IRFB7440PBF is a HEXFET® single N-channel Power MOSFET offers improved gate,avalanche and dynamic dV/dt ruggedness. It is suitable for battery poweredcircuits, half-bridge and full-bridge topologies, synchronous rectifierapplications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.Fully characterized capacitance and avalanche SOAEnhanced body diode dV/dt and di/dt capabilityApplicationsMotor Drive & Control, Power Management, Consumer ElectronicsProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 120ADrain Source Voltage Vds: 40VDrain Source On State Resistance: 0.002ohmOn Resistance Rds(on): 0.002ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 208WTransistor Case Style: TO-220ABPower Dissipation: 208WNo. of Pins: 3PinsOperating Temperature Max: 175°CMSL: MSL 1 - Unlimited