Infineon (IRS2302SPBF) Igbt/Mosfet Gate Driver, High Side, 5V-20V Supply

IGBT/MOSFET Gate Driver, High Side, 5V-20V Supply, 350mA Out, 200ns Delay,SOIC-8Product OverviewThe IRS2302SPBF is a high voltage high speed power MOSFET and IGBT Half-bridgeDriver with independent high and low-side referenced output channels.Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithicconstruction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current bufferstage. The floating channel can be used to drive an N-channel power MOSFET orIGBT in the high-side configuration which operates up to 600V.Floating channel designed for bootstrap operationTolerant to negative transient voltage (dV/dt immune)Under-voltage lockout for both channels3.3, 5 and 15V Input logic compatibleCross-conduction prevention logicMatched propagation delay for both channelsHigh-side output in phase with inputInternal 450ns dead-timeLower di/dt gate driver for better noise immunityShut down input turns-OFF both channelsApplicationsMotor Drive & Control, Power ManagementProduct InformationNo. of Channels: 2ChannelsDriver Configuration: High SidePower Switch Type: IGBT, MOSFETSupply Voltage Min: 5VSupply Voltage Max: 20VDriver Case Style: SOICInput Type: Non-InvertingIC Case / Package: SOICNo. of Pins: 8PinsSource Current: 200mAInput Delay: 220nsOutput Delay: 200nsSink Current: 350mAOperating Temperature Min: -40°COperating Temperature Max: 125°CProduct Range: -