Infineon (SPP20N60C3XKSA1) Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220, Through HoleProduct OverviewThe SPP20N60C3 is a 650V N-channel CoolMOS Power MOSFET with low specificon-state resistance. The CoolMOS MOSFET offers a significant reduction ofconduction, switching and driving losses and enable high power density andefficiency for superior power conversion systems. The latest state-of-the-artgeneration of high voltage power MOSFETs makes AC-DC power supplies moreefficient, more compact, lighter and cooler than ever before.Very low energy storage in output capacitance (Eoss) at 400VLow gate charge (Qg)High efficiency and power densityOutstanding performanceHigh reliabilityEasy to useApplicationsComputers & Computer Peripherals, Communications & Networking, ConsumerElectronics, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 20.7ADrain Source Voltage Vds: 650VDrain Source On State Resistance: 0.19ohmOn Resistance Rds(on): 0.19ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 208WTransistor Case Style: TO-220Power Dissipation: 208WNo. of Pins: 3PinsOperating Temperature Max: 150°C