IRF510N TO-220 N-Channel Power MOSFET 100V 5.6A ***LOCAL STOCK***

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XT Comp10348

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New

Location

South Africa

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2 ratings

Bob Shop ID

294809155

IRF510N TO-220 N-Channel Power MOSFET 100V 5.6A

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Package: TO-220
5.6A, 100V
rDS(ON)= 0.540¿
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance

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IRF510N TO-220 N-Channel Power MOSFET 100V 5.6A LOCAL STOCK

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