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The popular IRF520N MOSFET commonly used in driving a motor or LED with a signal from a microcontroller.
Fifth Generation HEXFETs from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
Advanced Process Technology
Dynamic dv/dt Rating
175\u00b0C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 100 V
Gate-Source Breakdown Voltage: 20 V
Continuous Drain Current: 9.7 A
Mounting Style: Through Hole
Gate Charge Qg: 16.7 nC
Power Dissipation: 48 W
