IRF540N MOSFET

Unleash efficiency with the IRF540N MOSFET, employing advanced trench technology for superior RDS(ON) and low gate charge. Perfect for power switching, hard-switched, and high-frequency circuits, as well as uninterruptible power supplies.

Key Features:

• VDS = 100V, ID = 35A, RDS(ON) < 30m @ VGS=10V
• High-density cell design for lower Rdson
• Fully characterized avalanche voltage and current
• Good stability with high EAS
• TO-220 package for excellent heat dissipation
• 100% UIS TESTED, 100% DVDS TESTED

Applications:

• Ideal for power switching applications
• Perfect for hard-switched and high-frequency circuits
• Reliable in uninterruptible power supplies

Maximum Ratings:

• Drain-Source Voltage (VDS): 100V
• Gate-Source Voltage (VGS): 20V
• Continuous Drain Current (ID): 35A
• Maximum Power Dissipation: 70W
• Operating Temperature Range: -55 to 175C

Electrical Characteristics:

• Breakdown Voltage (BVDSS): 100V
• Zero Gate Voltage Drain Current (IDSS): Up to 1A
• Gate Threshold Voltage (VGS(th)): 1.2 - 3V
• On-State Resistance (RDS(ON)): 25 - 30m @ VGS=10V, ID=12A

Datasheet

The datasheet for the IRF540N MOSFET can be found here: IRF540N Datasheet