DRAM, SDR, 256 Mbit, 16M x 16bit, 143 MHz, TSOP-II, 54 PinsProduct OverviewThe IS42S16160G-7TLI is a 256Mb Synchronous DRAM achieves high-speed datatransfer using pipeline architecture. All inputs and outputs signals refer tothe rising edge of the clock input. The 256Mb SDRAM is organized as 4M x16x4banks, 54-pin TSOPII and 54-ball BGA. The 256Mb SDRAM is a high speed CMOS,dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddqmemory systems containing 268,435,456 bits. Internally configured as a quad-bankDRAM with a synchronous interface. Each 67,108,864-bit bank is organized as8,192 rows by 512 columns by 16 bits or 8,192 rows by 1,024 columns by 8 bits.The 256Mb SDRAM includes an AUTO REFRESH MODE and a power-saving, power-downmode. All signals are registered on the positive edge of the clock signal, CLK.All inputs and outputs are LVTTL compatible.143MHz Clock frequency7ns SpeedFully synchronous, all signals referenced to a positive clock edgeInternal bank for hiding row access/precharge3.3 ±0.3V Single power supplyLVTTL interfaceProgrammable burst length - 1, 2, 4, 8, full pageSequential/Interleave programmable burst sequenceAuto refresh (CBR)Self refresh8K Refresh cycles every 16ms (A2 grade) or 64ms (commercial, industrial, A1grade)Random column address every clock cycleProgrammable CAS latency - 2, 3 clocksBurst read/write and burst read/single write operations capabilityBurst termination by burst stop and precharge commandApplicationsIndustrial, Commercial, Computers & Computer PeripheralsProduct InformationDRAM Type: SDRAccess Time: 7nsDRAM Density: 256MbitDRAM Memory Configuration: 16M x 16bitClock Frequency: 143MHzNo. of Pins: 54PinsMemory Case Style: TSOP-IISupply Voltage Nom: 3.3VOperating Temperature Min: -40°COperating Temperature Max: 85°CIC Interface Type: LVTTLProduct Range: IS42SMSL: MSL 3 - 168 hours
