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MOSFETs or Metal Oxide Silicon Field Effect Transistors were invented to overcome the disadvantages posed by FETs, such as slow operation, high drain resistance, and moderate input impedance. In this article, let us learn about the basics of MOSFET.
Metal Oxide Silicon Field Effect Transistors commonly known as MOSFETs are electronic devices used to switch or amplify voltages in circuits. It is a voltage-controlled device and is constructed by three terminals. The terminals of MOSFET are named as follows:
For more have a look at the link: How it works.
IXFP110N15T2 TO-220 Specification:
| Manufacturer | IXYS |
| Product Category | FETs - Single |
| Series | IXFP110N15 |
| Packaging | To-220 |
| Unit-Weight | 0.012346 oz |
| Mounting-Style | Through Hole |
| Tradename | HiPerFET |
| Package-Case | TO-220-3 |
| Technology | Si |
| Number-of-Channels | 1 Channel |
| Configuration | Single |
| Transistor-Type | 1 N-Channel |
| Pd-Power-Dissipation | 480 W |
| Maximum Operating Temperature | + 175 C |
| Operating temperature range | - 55 C |
| Fall-Time | 18 ns |
| Rise-Time | 16 ns |
| Vgs-Gate-Source-Voltage | 20 V |
| ID (drain current) | 110 A |
| Vds-Drain-Source-Breakdown-Voltage | 150 V |
| Vgs-th-Gate-Source-Threshold-Voltage | 4.5 V |
| Rds-On-Drain-Source-Resistance | 11 mOhms |
| Transistor-Polarity | N-Channel |
| Typical-Turn-Off-Delay-Time | 33 ns |
| Turn-On Delay Time | 33 ns |
| Qg-Gate-Charge | 150 nC |
| Transconductance | 75 S |
| Channel-Mode | Enhancement |
For more information on this MOSFET here is a datasheet
IXFP110N15T2 TO-220 Features:
• International standard packagesIXFP110N15T2 TO-220 Advantages:
• Easy to mountIXFP110N15T2 TO-220 Applications:
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor drives
• Uninterruptible power supplies
• High-speed power-switching applications