Main centres: | 1-3 business days |
Regional areas: | 3-4 business days |
Remote areas: | 3-5 business days |
Specifications:
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power 1.170 W*
UL Rating 94 V - 0
Operating Temperature 0°C to 85°C
Storage Temperature -55°C to +100°C
*Power will vary depending on the SDRAM used.
Features:
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 11, 10, 9, 8, 7, 6
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4
- Bi-directional Differential Data Strobe
- Internal(self) calibration
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C - Asynchronous Reset
- PCB: Height 1.180" (30.00mm), single sided component
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