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Kioxia 512GB M.2 2230 NVMe PCIe Gen4x4 SSD
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Kioxia 512GB M.2 2230 NVMe PCIe Gen4x4 SSD

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R1,402.83
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Product details

Condition
New
Location
South Africa
Product code
KEG60ZNS512G
Bob Shop ID
676403621

Kioxia M.2 2230 NVME PCIe SSD - 512GB Capacity, M.2 NVMe PCIe Interface, PCIe Gen4x4, Up to 2000Mbps Sequential Reading Speed, Up to 1000Mbps Sequential Writing Speed, Retail Box, 6 Months Warranty.


Product Overview 

Kioxia 512 GB M.2 2230 NVMe PCIe Gen4x4 SSD Compact singlesided M.2 2230 form factor drive with 512 GB capacity, designed for thinandlight laptops, tablets, and embedded systems that use the 2230 slot. Leverages PCIe Gen4x4 NVMe interface to deliver up to 2000 MB/s sequential read and up to 1000 MB/s sequential write speeds for fast boot, app loading, and file transfers. Built on Kioxia's BiCS FLASH TLC technology, this SSD is ideal as an OEM or upgrade drive in compact PCs, 2in1s, and miniPCs where space and performance both matter.


Features

Ultra-Compact 2230 Form Factor Single-sided M.2 2230 design ideal for thin laptops, tablets, mini PCs, and embedded systems
High-Speed PCIe Gen4 Performance Delivers fast data transfer for quick boot times, app launches, and file access
Efficient NVMe Technology Supports NVMe 1.4 interface for improved responsiveness and lower latency
BiCS FLASH TLC Memory Reliable 3D NAND technology for durability and consistent performance
Space-Saving Design Perfect for devices with limited internal space such as ultrabooks and handheld PCs
Energy Efficient Operation Optimized for low power consumption in mobile and compact systems
OEM Upgrade Solution Suitable for upgrading compatible compact devices and replacing existing 2230 SSDs


Specifications

Product Code: KEG60ZNS512G
Description: Kioxia 512GB M.2 2230 NVMe PCIe Gen4x4 SSD
Capacity: 512GB
Form Factor: M.2 2230 Single Sided Module
Interface: PCI Gen4 x 4 NVMe
Sequential Read Speed: up to 2000 MB/s
Sequential Write Speed: up to 1000 MB/s
Flash Memory Type: Kioxia BiCS FLASH 3D TLC NAND
Random Performance (Typical):
Up to ~400K IOPS read
Up to ~430K IOPS write
Endurance: Approx. 300 TBW
Operating Temperature: 0°C to 85°C