Nexperia (PBSS306PZ,135) Bipolar (BJT) Single Transistor, PNP, 100V, 4.1A

Bipolar (BJT) Single Transistor, PNP, 100 V, 4.1 A, 700 mW, SOT-223, SurfaceMountProduct OverviewThe PBSS306PZ,135 is a 4.1A PNP breakthrough-in small signal (BISS) Transistorin a small surface-mount plastic package with increases heat-sink.Low collector-emitter saturation voltage VCEsatHigh collector current capability IC and ICMHigh collector current gain (hFE) at high ICHigh efficiency due to less heat generationSmaller printed-circuit board (PCB) area than for conventional transistorsAEC-Q101 qualifiedNPN complement is PBSS306NZS306PZ Marking codeProduct InformationTransistor Polarity: PNPCollector Emitter Voltage V(br)ceo: 100VDC Collector Current: 4.1ATransition Frequency ft: 100MHzPower Dissipation Pd: 700mWDC Current Gain hFE: 300hFETransistor Mounting: Surface MountTransistor Case Style: SOT-223No. of Pins: 4PinsOperating Temperature Max: 150°CProduct Range: -Automotive Qualification Standard: -MSL: MSL 1 - Unlimited