Onsemi (FDS6681Z) Power MOSFET, P Channel, 30 V, 20 A, 0.0038 ohm

Power MOSFET, P Channel, 30 V, 20 A, 0.0038 ohm, SOIC, Surface MountProduct OverviewThe FDS6681Z is a -30V P-channel PowerTrench® MOSFET has been specially tailoredto minimize the on-state resistance and to maintain low gate charge for superiorswitching performance. The latest medium voltage power MOSFET is optimized powerswitches combining small gate charge (QG), small reverse recovery charge (Qrr)and soft reverse recovery body diode, which contributes fast switching forsynchronous rectification in AC/DC power supplies. It employs shielded-gatestructure that provides charge balance. By utilizing this advanced technology,the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than thatof previous generation. Soft body diode performance of new PowerTrench® MOSFETis able to eliminate snubber circuit or replace higher voltage rating - MOSFETneed circuit because it can minimize the undesirable voltage spikes insynchronous rectification. This product is general usage and suitable for manydifferent applications.Extended VGSS range (-25V) for battery applicationsHBM ESD protection level of ±3.8kV typicalHigh performance trench technology for extremely low RDS (on)High power and current handling capabilityProduct InformationChannel Type: P ChannelTransistor Polarity: P ChannelContinuous Drain Current Id: 20ADrain Source Voltage Vds: 30VDrain Source On State Resistance: 0.0038ohmOn Resistance Rds(on): 0.0038ohmRds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 1.8VPower Dissipation Pd: 2.5WTransistor Case Style: SOICPower Dissipation: 2.5WNo. of Pins: 8PinsOperating Temperature Max: 150°C