Onsemi (FQA24N60) Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm

Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through HoleProduct OverviewThe FQA24N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is producedusing planar stripe and DMOS technology. This advanced technology has beenespecially tailored to minimize on-state resistance, provide superior switchingperformance and withstand high energy pulse in the avalanche and commutationmode. This device is well suited for high efficient switched mode powersupplies, active power factor correction and electronic lamp ballast based onhalf bridge topology. This product is general usage and suitable for manydifferent applications.Low gate charge100% avalanche testedProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 23.5ADrain Source Voltage Vds: 600VDrain Source On State Resistance: 0.24ohmOn Resistance Rds(on): 0.24ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 5VPower Dissipation Pd: 310WTransistor Case Style: TO-3PPower Dissipation: 310WNo. of Pins: 3PinsOperating Temperature Max: 150°C