Onsemi (HGTG11N120CND) IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 Pins

Product OverviewThe HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode.It is in a non-punch through (NPT) IGBT design. This NPT series is a new memberof the MOS gated high voltage switching IGBT family. IGBT combines the bestfeatures of MOSFET and bipolar transistors. This device has the high inputimpedance of a MOSFET and the low on-state conduction loss of a bipolartransistor. Offers lower conduction loss and lower switching loss for designinghigh efficiency and reliable systems. Optimized manufacturing process results inbetter control and repeatability of the top-side structure, resulting in tighterspecifications and better EMI performance. This product is general usage andsuitable for many different applications.340ns at TJ = 150°C Fall timeProduct InformationContinuous Collector Current: 43ACollector Emitter Saturation Voltage: 2.4VPower Dissipation: 298WCollector Emitter Voltage Max: 1.2kVTransistor Case Style: TO-247No. of Pins: 3PinsOperating Temperature Max: 150°CTransistor Mounting: Surface Mount