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Product OverviewThe MJE13007G is a Silicon NPN Bipolar Power Transistor designed for highvoltage and high speed power switching inductive circuits where fall time iscritical. It is particularly suited for 115 and 220V switch mode applicationssuch as switching regulators, inverters, motor controls, solenoid/relay driversand deflection circuits.SOA and switching applicationsCollector-base voltage (Vcbo = 700V)Emitter-base voltage (Vcbo = 9V)Product InformationTransistor Polarity: NPNCollector Emitter Voltage V(br)ceo: 400VTransition Frequency ft: 14MHzPower Dissipation Pd: 80WDC Collector Current: 8ADC Current Gain hFE: 4hFETransistor Mounting: Through HoleTransistor Case Style: TO-220No. of Pins: 3PinsOperating Temperature Max: 150°CProduct Range: -Automotive Qualification Standard: -MSL: -
