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Product OverviewThe MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistordesigned for use in general-purpose amplifier and switching applications. TheMJE2955T (PNP) and MJE3055T (NPN) are complementary devices.DC current gain specified to 10AHigh current gain - bandwidth70VDC Collector to base voltage (VCBO)5V Emitter to base voltage (VEBO)6ADC Base current (IB)1.67°C/W Thermal resistance, junction to caseApplicationsIndustrialProduct InformationTransistor Polarity: NPNCollector Emitter Voltage V(br)ceo: 60VTransition Frequency ft: 2MHzPower Dissipation Pd: 75WDC Collector Current: 10ADC Current Gain hFE: 5hFETransistor Mounting: Through HoleTransistor Case Style: TO-220No. of Pins: 3PinsOperating Temperature Max: 150°CProduct Range: -Automotive Qualification Standard: -MSL: -
