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Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.04 ohm, TO-247Product InformationMOSFET Module Configuration: SingleChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 1.2kVContinuous Drain Current Id: 58AOn Resistance Rds(on): 0.04ohmDrain Source On State Resistance: 0.04ohmTransistor Case Style: TO-247No. of Pins: 4PinsRds(on) Test Voltage: 20VGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 319WPower Dissipation: 319WOperating Temperature Max: 175°C