SAMSUNG 512 MB DDR 400 RAM . BRAND NEW...

DDR SDRAM (double-data-rate synchronous dynamic random access memory) is a type of memory integrated circuit used in computers. It achieves greater bandwidth than ordinary SDRAM by transferring data on both the rising and falling edges of the clock signal (double pumped). This effectively nearly doubles the transfer rate without increasing the frequency of the front side bus.

Features:
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
Differential clock inputs(CK and /CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency : DDR333(2.5 Clock), DDR400(3 Clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8μs refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1,250 (mil) & single (256, 512MB), double (1GB) sided
SSTL_2 Interface
66pin TSOP II Pb-Free package(RoHS compliant)