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  3D V-NAND Technology

  Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
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  Incredible Read/Write Speeds

  Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 1.9x faster performance than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.
  
  * Performance compared to 3-Bit MLC-class SSD drives
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  Enhanced RAPID mode

  Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
  
  * Compared to same drive w/out RAPID enabled
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  Guaranteed Endurance and reliability

  The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5 year warranty. With enhanced long-term reliability, the 850 EVO assures longterm dependable performance of up to 30% longer than the previous generation 840 EVO.
  
  * Measured by Terrabytes Written (TBW)
  ** Measured with Sustained Performance 12hr Random Write Test
  *** Highest among 3-Bit MLC-class SSD drives

http://www.samsung.com/global/business/semiconductor/minisite/SSD/global/html/ssd850evo/overview.html