Inovative 3D V-NAND technology

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.

Specification:
- Interface: SATA 6 Gb/s Interface
- Storage Memory: Samsung 32 layer 3D V-NAND
- TRIM Support: TRIM Supported
- Encryption Support: AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667
- S.M.A.R.T Support: S.M.A.R.T Supported
- GC (Garbage Collection): Auto Garbage Collection Algorithm
- Sequential Read: Up to 540 MB/sec Sequential Read
- Sequential Write: Up to 520 MB/sec Sequential Write