Samsung MZ-77E2T0BW 870 EVO 2TB 2.5 inch SATA 3.0 6 Gb/s Solid State Drive Samsung MZ-77E2T0BW 870 EVO 2TB 2.5 inch SATA 3.0 6 Gb/s Solid State Drive Samsung MZ-77E2T0BW 870 EVO 2TB 2.5 inch SATA 3.0 6 Gb/s Solid State Drive
Samsung MZ-77E2T0BW 870 EVO 2TB 2.5 inch SATA 3.0 6 Gb/s Solid State Drive Samsung MZ-77E2T0BW 870 EVO 2TB 2.5 inch SATA 3.0 6 Gb/s Solid State Drive Samsung MZ-77E2T0BW 870 EVO 2TB 2.5 inch SATA 3.0 6 Gb/s Solid State Drive

Samsung MZ-77E2T0BW 870 EVO 2TB 2.5 inch SATA 3.0 6 Gb/s Solid State Drive

New 92 available
Indicative market price: R18,549.00
R12,917.00
30% off
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Standard Delivery
Main centres:  1-3 business days
Regional areas: 3-4 business days
Remote areas: 3-5 business days
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Product details

Condition
New
Location
South Africa
Product code
SAMSUNG MZ-77E2T0BW
Bob Shop ID
645953627

2TB Storage Capacity
- 2.5" Form Factor
- SATA 3.0 6 Gb/s Interface
- Sequential Read Speed: Up to 560 MB/s
- Sequential Write Speed: Up to 530 MB/s
- 4KB QD32 Random Read: Up to 98,000 IOPS
- 4KB QD32 Random Write: Up to 88,000 IOPS
- AES 256-bit Encryption
- Auto Garbage Collection Algorithm
- Flash Memory: Samsung V-NAND 3bit MLC
- MTBF: 1,500,000 Hours

 

SPECIFICATIONS:

Brand Samsung
Series 870 EVO
Model MZ-77E2T0BW
General
Capacity 2 TB
Form Factor 2.5 inch
Interface SATA 6 Gb/s Interface, Compatible with SATA 3 Gb/s & SATA 1.5 Gb/s Interface
Storage Memory Samsung V-NAND 3bit MLC
Controller Samsung MKX Controller
Cache Memory Samsung 2 GB Low Power DDR4 SDRAM
Dimensions 100 x 69.85 x 6.8 mm
Weight 45 g
Management Software Magician Software for SSD Management, Data Migration Software for SSD Upgrade
Key Features
TRIM Support Yes
S.M.A.R.T Support Yes
Garbage Collection Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667
Device Sleep Mode Support Yes
Performance
Sequential Read Up to 560 MB/s
Sequential Write Up to 530 MB/s
Random Read (4KB, QD32) Up to 98,000 IOPS
Random Write (4KB, QD32) Up to 88,000 IOPS
Random Read (4KB, QD1) Up to 13,000 IOPS
Random Write (4KB, QD1) Up to 36,000 IOPS
Environment
Average Power Consumption Average: 2.5 W
Maximum: 4.5 W (Burst mode)
Power consumption (Idle) Max. 35 mW
Reliability (MTBF) 1.5 Million Hours
Shock 1,500 G & 0.5 ms (Half Sine)
Allowable Voltage 5V ± 5%
Operating Temperature 0 - 70 °C

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