Samsung MZ-M5E1T0BW 850 EVO 1TB SATA 6Gb/s 3D V-NAND mSATA Solid State Drive

- 1TB

- mSATA

- SATA 6Gb/s

- Samsung 1 GB Low Power DDR2

- 540Mb/s Sequential Read Speed

- 520MB/s Sequential Write Speed

FULL SPECIFICATIONS

Brand: Samsung

Model: MZ-M5E1T0BW

Series: 850 EVO

Capacity: 1,000Gb

Form Factor: mSATA

Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

Dimension (WxHxD): (50.80 ± 0.15) x (29.85 ± 0.15) x Max 3.85 mm

Weight  Max. 8.5 g

Storage Memory: Samsung 32 layer 3D V-NAND

Controller: Samsung MEX Controller

Cache Memory: Samsung 1 GB Low Power DDR2 SDRAM

Special Feature

TRIM Supported

S.M.A.R.T Supported

Auto Garbage Collection Algorithm

AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)

Device Sleep Mode Support: Yes

Performance

Sequential Read               Up to 540 MB/seconds Sequential Read

Sequential Write               Up to 520 MB/seconds Sequential Write

Random Read (4KB, QD32)           Up to 97,000 IOPS Random Read

Random Write (4KB, QD32)          Up to 88,000 IOPS Random Write

Random Read (4KB, QD1)             Up to 10,000 IOPS Random Read

Random Write (4KB, QD1)             Up to 40,000 IOPS Random Write

Environment

Average Power Consumption (system level): Average: 4.3 Watts *Maximum: 5.7 Watts (Burst mode) 

Power consumption (Idle): Max. 50 mWatts * Actual power consumption may vary depending on system hardware & configuration

Allowable Voltage: 3.3 V ± 5% Allowable voltage

Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)

Operating Temperature 0 - 70 °C Operating Temperature

Shock: 1,500 G & 0.5 ms (Half sine)