STMicroelectronics (BD139) Bipolar (BJT) Single Transistor, NPN, 80V, 1.5A

Bipolar (BJT) Single Transistor, NPN, 80 V, 1.5 A, 1.25 W, TO-126, Through HoleProduct OverviewThe BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32package. This device is designed for audio amplifiers and drivers utilizingcomplementary or quasi-complementary circuits.Products are pre-selected in DC current gainCollector to emitter voltage (Vce) is 80VCollector current (Ic) is 1.5APower dissipation (Pd) is 12.5WCollector to emitter saturation voltage of 500mV at 0.5A collector currentDC current gain (hFE) of 25 at 0.5A collector currentOperating junction temperature range from 150°CApplicationsPower Management, Consumer Electronics, Portable Devices, IndustrialProduct InformationTransistor Polarity: NPNCollector Emitter Voltage V(br)ceo: 80VDC Collector Current: 1.5APower Dissipation Pd: 1.25WTransistor Case Style: TO-126Transistor Mounting: Through HoleNo. of Pins: 3PinsTransition Frequency ft: -DC Current Gain hFE: 40hFEOperating Temperature Max: 150°CProduct Range: -Automotive Qualification Standard: -MSL: -