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Power MOSFET, N Channel, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface MountProduct OverviewThe IPB027N10N3 G is an OptiMOS N-channel Power MOSFET offers superiorsolutions for high efficiency, high power-density SMPS. Compared to the nextbest technology this family achieves a reduction of 30% in both RDS (ON) andFOM.Excellent switching performanceWorld's lowest RDS (ON)Very low Qg and QgdExcellent gate charge x RDS (ON) product (FOM)Environmentally friendlyHighest power densityLess paralleling requiredSmallest board-space consumptionEasy-to-design productsHalogen-free, Green deviceMSL1 rated 2ApplicationsPower Management, Audio, Motor Drive & Control, Industrial, AutomotiveProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 120ADrain Source Voltage Vds: 100VDrain Source On State Resistance: 0.0023ohmOn Resistance Rds(on): 0.0023ohmTransistor Case Style: TO-263 (D2PAK)Rds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 2.7VPower Dissipation Pd: 300WPower Dissipation: 300WNo. of Pins: 3PinsOperating Temperature Max: 175°CMSL: MSL 1 - Unlimited
