Stmicroelectronics (L6390D) Igbt/Mosfet Driver, High Side And Low Side

IGBT/MOSFET Driver, High Side And Low Side, 12.5V-20V Supply, 430mA Out, 125nsDelay, SOIC-16Product OverviewThe L6390D is a full featured High Voltage Device manufactured with the BCDoffline technology. It is a single-chip half-bridge gate driver for N-channelpower MOSFETs or IGBTs. The high-side (floating) section is able to work withvoltage rail up to 600V. Both device outputs can sink and source 430 and 290mArespectively. Prevention from cross conduction is ensured by interlocking andprogrammable dead-time functions. The device has dedicated input pins for eachoutput and a shutdown pin. The logic inputs are CMOS/TTL compatible down to 3.3Vfor easy interfacing with control devices. Matched delays between low-side andhigh-side sections guarantee no cycle distortion and allow high frequencyoperation. The L6390 embeds an operational amplifier suitable for advancedcurrent sensing in applications such as field oriented motor control or forsensorless BEMF detection.CMOS/TTL inputs with hysteresisIntegrated bootstrap diodeOperational amplifier for advanced current sensingComparator for fast fault protectionSmart shutdown functionInterlocking functionCompact and simplified layoutBill of material reductiondV/dt immunity of ±50V/ns in full temperature range75/35ns Rise/fall with 1nF load switching timeApplicationsConsumer Electronics, HVAC, Motor Drive & Control, Industrial, BuildingAutomation, Power ManagementProduct InformationNo. of Channels: 2ChannelsDriver Configuration: High Side and Low SidePower Switch Type: IGBT, MOSFETSupply Voltage Min: 12.5VSupply Voltage Max: 20VDriver Case Style: SOICInput Type: Non-InvertingIC Case / Package: SOICNo. of Pins: 16PinsSource Current: 290mAInput Delay: 125nsOutput Delay: 125nsSink Current: 430mAOperating Temperature Min: -40°COperating Temperature Max: 125°CProduct Range: -MSL: MSL 3 - 168 hours