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Bipolar (BJT) Single Transistor, PNP, 60 V, 10 A, 75 W, TO-220, Through HoleProduct OverviewThe MJE2955T is a -60V Silicon Epitaxial Base PNP Power Transistor intended forpower switching circuits and general purpose amplifiers. Fast switching timesand very low saturation voltage resulting in reduced switching and conductionlosses.Complementary to the MJE3055TWell-controlled hFE parameter for increased reliabilityProduct InformationTransistor Polarity: PNPCollector Emitter Voltage V(br)ceo: 60VTransition Frequency ft: 2MHzPower Dissipation Pd: 75WDC Collector Current: 10ADC Current Gain hFE: 20hFETransistor Mounting: Through HoleTransistor Case Style: TO-220No. of Pins: 3PinsOperating Temperature Max: 150°CProduct Range: -Automotive Qualification Standard: -MSL: -