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Silicon Carbide MOSFET, Single, 12 A, 1.2 kV, 0.5 ohm, HiP247Product InformationMOSFET Module Configuration: SingleChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 12ADrain Source Voltage Vds: 1.2kVDrain Source On State Resistance: 0.5ohmOn Resistance Rds(on): 0.5ohmTransistor Case Style: HiP247No. of Pins: 3PinsRds(on) Test Voltage: 20VGate Source Threshold Voltage Max: 3.5VPower Dissipation Pd: 150WPower Dissipation: 150WOperating Temperature Max: 200°CMSL: MSL 1 - Unlimited
