Stmicroelectronics (SCT30N120) Silicon Carbide MOSFET, Single, 40 A

Silicon Carbide MOSFET, Single, 40 A, 1.2 kV, 0.08 ohm, HiP247Product OverviewThe SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassedon-resistance per unit area and very good switching performance independent oftemperature. Suitable for high efficiency and high power density applications.Very tight variation of on-resistance vs. temperatureSlight variation of switching losses vs. temperatureVery high operating temperature capability (200°C)Very fast and robust intrinsic body diodeLow capacitanceApplicationsIndustrial, Power ManagementProduct InformationMOSFET Module Configuration: SingleChannel Type: N ChannelContinuous Drain Current Id: 40ATransistor Polarity: N ChannelDrain Source Voltage Vds: 1.2kVOn Resistance Rds(on): 0.08ohmDrain Source On State Resistance: 0.08ohmRds(on) Test Voltage: 20VTransistor Case Style: HiP247Gate Source Threshold Voltage Max: 2.6VPower Dissipation Pd: 270WNo. of Pins: 3PinsOperating Temperature Max: 200°CPower Dissipation: 270WMSL: MSL 1 - Unlimited