Stmicroelectronics (STD10NM60N) Power MOSFET, N Channel, 600 V, 10 A

Power MOSFET, N Channel, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Surface MountProduct OverviewThe STD10NM60N is a MDmesh II N-channel Power MOSFET features low inputcapacitance and gate charge. This Power MOSFET is developed using the secondgeneration of MDmesh technology. This revolutionary Power MOSFET associates avertical structure to the company's strip layout to yield one of the world'slowest ON-resistance. It is therefore suitable for the most demanding highefficiency converters.100% Avalanche testedLow gate input resistanceApplicationsIndustrial, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 10ADrain Source Voltage Vds: 600VDrain Source On State Resistance: 0.53ohmOn Resistance Rds(on): 0.53ohmTransistor Case Style: TO-252 (DPAK)Rds(on) Test Voltage: 10VTransistor Mounting: Surface MountGate Source Threshold Voltage Max: 3VPower Dissipation Pd: 70WPower Dissipation: 70WNo. of Pins: 3PinsOperating Temperature Max: 150°CMSL: MSL 1 - Unlimited