Stmicroelectronics (STW4N150) Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm

Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm, TO-247, Through Hole\Product OverviewThe STW4N150 is a 1500V N-channel Power MOSFET developed using the wellconsolidated high voltage MESH OVERLAY process. The strengthened layout coupledwith the proprietary edge termination structure gives the lowest RDS (on) perarea, unrivalled gate charge and switching characteristics. Improved gate chargeand lower power dissipation to meet today's challenging efficiency requirements.100% Avalanche testedIntrinsic capacitances and Qg minimizedHigh speed switchingApplicationsIndustrialProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 1.5kVContinuous Drain Current Id: 4ADrain Source On State Resistance: 7ohmOn Resistance Rds(on): 7ohmTransistor Case Style: TO-247Transistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 160WPower Dissipation: 160WNo. of Pins: 3PinsOperating Temperature Max: 150°C