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Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through HoleProduct OverviewThe IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gatecharge.Improved gate, avalanche and dynamic dV/dt ruggednessFully characterized capacitance and avalanche voltage and currentEffective COSS specifiedSimple drive requirementsApplicationsIndustrial, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 5.5ADrain Source Voltage Vds: 400VDrain Source On State Resistance: 1ohmOn Resistance Rds(on): 1ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4.5VPower Dissipation Pd: 74WTransistor Case Style: TO-220ABPower Dissipation: 74WNo. of Pins: 3PinsOperating Temperature Max: 150°C