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Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through HoleProduct OverviewThe IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gatecharge. This new low charge Power device achieves significantly lower gatecharge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowingfor reduced gate drive requirements and total system savings. In addition,reduced switching losses and improved efficiency are achievable in a variety ofhigh frequency applications. Frequencies of a few MHz at high current arepossible using the new low charge MOSFETs. This device improvements combinedwith the proven ruggedness and reliability that are characteristic of PowerMOSFET offers the designer a new standard in power transistors for switchingapplications.Repetitive avalanche ratedReduced gate drive requirement30V Enhanced VGS RatingReduced CISS, COSS, CRSSExtremely high frequency operationApplicationsIndustrial, Power ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelContinuous Drain Current Id: 10ADrain Source Voltage Vds: 400VDrain Source On State Resistance: 0.55ohmOn Resistance Rds(on): 0.55ohmRds(on) Test Voltage: 10VTransistor Mounting: Through HoleGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 125WTransistor Case Style: TO-220ABPower Dissipation: 125WNo. of Pins: 3PinsOperating Temperature Max: 150°C