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Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through HoleProduct OverviewThe IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET® powerMOSFET provides the designer with the best combination of fast switching,ruggedized device design and low on-resistance. The package is universallypreferred for all commercial-industrial applications at power dissipation levelsto approximately 50W.Dynamic dV/dt ratingRepetitive avalanche rated175°C Operating temperatureEasy to parallelSimple drive requirementApplicationsPower ManagementProduct InformationChannel Type: N ChannelTransistor Polarity: N ChannelDrain Source Voltage Vds: 500VContinuous Drain Current Id: 8ADrain Source On State Resistance: 0.85ohmOn Resistance Rds(on): 0.85ohmTransistor Case Style: TO-220ABTransistor Mounting: Through HoleRds(on) Test Voltage: 10VGate Source Threshold Voltage Max: 4VPower Dissipation Pd: 125WPower Dissipation: 125WNo. of Pins: 3PinsOperating Temperature Max: 150°C